The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 1992
Filed:
Apr. 17, 1991
Tetsuo Sekiwa, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A light emitting device having: a first GaAlAs clad layer of a first conductivity type having a first AlAs mixed crystal ratio, the first GaAlAs clad layer serving as a first layer of the device; a GaAlAs active layer having a second AlAs mixed crystal ratio different from the first AlAs mixed crystal ratio, the second AlAs mixed crystal ratio being set to a value necessary for light emission wavelength within a range of 610 nm to 640 nm, the GaAlAs active layer serving as a second layer of the device; and a second GaAlAs clad layer of a second conductivity type having a third AlAs mixed crystal ratio different from the second AlAs mixed crystal ratio, the second GaAlAs clad layer serving as a third layer of the device, wherein the GaAlAs active layer of the first conductivity type serving as said second layer is sandwiched between the first GaAlAs clad layer of the first conductivity type serving as the first layer and the second GaAlAs clad layer of the second conductivity type serving as the third layer, to constiutute a double hetero structure. The second AlAs mixed crystal ratio is 0.4 to 0.56, while the third mixed crystal value ratio is 0.75 to 0.85.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile