The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 1992
Filed:
Aug. 13, 1991
Kazuhisa Takahashi, Itami, JP;
Abstract
A method of fabricating a semiconductor laser device includes disposing a lower cladding layer, a superlattice active layer, an upper cladding layer, and a contact layer in the named order on a substrate, forming resonator end surfaces, disposing, on the resonator end surfaces, films containing a material that disorders the semiconductor superlattice structure when diffused into the superlattice structure, and passing a current between the substrate and the contact layer to cause laser oscillations. The laser oscillations produce laser light that is absorbed at the resonator end surfaces. The resonator end surfaces are locally heated due to absorption of laser light whereby the disorder-causing material is diffused from the films into the resonator end surfaces and the semiconductor superlattice structure in the vicinity of the resonator end surfaces is thereby disordered to form window regions.