The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 1992
Filed:
Dec. 28, 1990
Mitsuru Sakamoto, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a dielectric isolation structure for elements in a semiconductor integrated circuit device, thermal stress and the resistance to hydrofluoric acid have been improved by using silicon boron nitride, silicon oxynitride or silicon nitride as an insulator material in the manner embedded in grooves or trenches formed on a surface of a substrate of the device. Additional merit of reducing parasitic capacitance of the dielectric isolation structure can be obtained by introducing therein a composite layer comprising a layer of porous silicon oxide and a layer of the insulator material as above.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile