The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 1992
Filed:
May. 13, 1991
Anatoly Feyenson, Hillsboro, NJ (US);
John W Osenbach, Kutztown, PA (US);
Donald G Schimmel, Muhlenberg Township, Berks County, PA (US);
AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
A process for growing selective epitaxial layers on a silicon substrate. In a epitaxial growth reactor, hydrogen and the reactive gasses, the silicon source gas and hydrochloric acid, are introduced. The amount of silicon to free hydrochloric acid is controlled to be about 1:6 during the growth process and then turned off, the hydrogen remaining on. The resulting epitaxial layer may be grown over one micron in thickness with less than 0.1 micron of faceting. Further, a etchant of H.sub.2 O and HF diluted in NHO.sub.3 is first used to remove surface damage on the silicon substrate prior to epitaxial layer growth.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile