The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 1992
Filed:
Nov. 07, 1991
James E Bowles, Austin, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A testing circuit for testing field-effect transistors of, for example, a random access memory includes weak N-channel pull-down field-effect transistors and weak P-channel pull-up field-effect transistors for testing field-effect transistors of opposite type to be tested. The weak field-effect transistors are placed in series with the opposite type of field-effect transistors. When the series coupled field-effect transistors are turned on, the voltage at the common node of the field-effect transistors is sensed to determine whether the common node is pulled-up or pulled-down in potential to indicate whether a field-effect transistor under test is functional.