The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 1992
Filed:
Jul. 10, 1991
Kueing D Chen, Plano, TX (US);
Roland H Pang, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method and structure for protecting an integrated circuit from electrostatic discharges are disclosed. A Schottky diode (22) is connected to an input bond pad (12) and to a MOSFET transistor (17) which is desired to be protected. The normally high breakdown voltage required to drive the Schottky diode (22) into conduction is reduced by providing a trigger transistor (24) for prematurely triggering the diode (22). When the base-collector junction of the common emitter configured trigger transistor (24) is driven into avalanche breakdown by the electrostatic discharge, charged carriers (60) are generated, and attracted by the Schottky diode (22). The base (54) of the trigger transistor (24) is biased during normal operations with a supply voltage, and during electrostatic discharges to a higher voltage by an inherent Zener diode (64). When normal power is applied to the integrated circuit (10), input latch-up immunity is enhanced, and when an electrostatic discharge appears at the input bond pad (12), the electrostatic discharge protection is enhanced.