The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 1992
Filed:
Apr. 02, 1990
Haruo Wakai, Fussa, JP;
Nobuyuki Yamamura, Hachioji, JP;
Syunichi Sato, Kawagoe, JP;
Minoru Kanbara, Hachioji, JP;
Casio Computer Co., Ltd., Tokyo, JP;
Abstract
First, a gate metal layer, a gate insulating film, a semiconductor layer, an n-type semiconductor layer, and an ohmic metal layer formed on a substrate in the order mentioned. Then, the film and the layers are patterned into those having the same shape and size. Next, a source metal layer and a drain metal layer are formed on the ohmic metal layer. Further, a portion of the ohmic metal layer, a portion of said source metal layer, and a portion of said drain metal layer are etched, thereby forming a channel portion. Finally, a transparent electrode is formed on the source metal layer, thus manufacturing a TFT. Since the film and the layer, the major components of the TFT, are sequentially formed, and are patterned simultaneously, the TFT can be manufacture with high yield. Further, since the transparent electrode is formed on the uppermost layer, i.e., the source metal layer, the pixel has a great opening ratio.