The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 1992
Filed:
Jun. 04, 1991
Tatsuo Yokotsuka, London, GB;
Masato Nakajima, Kawasaki, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A semiconductor laser device which comprises a monocrystal substrate of consisting essentially of Si.sub.a Ge.sub.1-a, wherein 0.ltoreq.a.ltoreq.0.25, and a compound semiconductor layer which is formed on one side of the substrate and is lattice-matched with the substrate. The compound semiconductor layer includes an Al-free active layer made of Ga.sub.b In.sub.1-b P wherein 0.51<b.ltoreq.0.64 and the first and second clad layers sandwiching the active layer therebetween wherein said first clad layer is formed on the one side of the substrate. The first and second clad layer are each made of (Al.sub.o Ga.sub.1-o).sub.d In.sub.1-d P, wherein 0.4.ltoreq.c.ltoreq.1 and 0.51<d.ltoreq.0.64.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile