The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 1992
Filed:
Jul. 10, 1991
Itaru Maekawa, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A bias voltahe generating circuit which is low in power consumption and small in chip size of an IC and does not pickup noises readily. The bias voltage generating circuit comprises a current mirror circuit including a diode-connected first transistor of a first conduction type and second and third transistors of the first conduction type, and bias voltage generating fourth and fifth transistors of a different second conduction type having input electrodes connected to output electrodes of the second and third transistors, respectively. The first to third transistors and the fourth and fifth transistors are formed on a single chip semiconductor substrate as a semiconductor integrated circuit. The bias voltage generating circuit further comprises a resistor provided outside the integrated circuit and connected to an input electrode of the first transistor, and a predetermined bias current is supplied to the first transistor through the resistor. Also an improved operational amplifier circuit which is low in power consumption and small in chip size of an IC and does not pickup noises readily is disclosed and incorporates such bias voltage generating circuit.