The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 1992
Filed:
Sep. 30, 1991
Curtis D Moyer, Pheonix, AZ (US);
Steven A Voight, Gilbert, AZ (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A method of reducing the leakage current of a III-V compound semiconductor device (10) includes providing the device with a confinement layer having two sections (13, 14). A first section (14) has a higher doping concentration than a second section (13). An energy barrier that confines minority carriers to an active layer (12) of the device (10) is formed by diffusing a dopant into a portion of the active layer (12) and the two sections (13, 14) of the confinement layer. During the diffusion, the conductivity type of a portion of the lower doped second section (13) is inverted while the higher doped first section (14) is not inverted.