The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 1992
Filed:
May. 10, 1991
Applicant:
Inventors:
Jong R Kim, Seoul, KR;
Dong S Bang, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suweon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 50 ; 372 45 ; 372 46 ;
Abstract
The present invention relates a laser diode array and its manufacturing method. After formation of V-channels on an N-type GaAs substrate, each layer is formed by molecular beam epitaxy technique. By using that Si acts as P-type dopant on {111} A surface of V-channel, while acting as N-type dopant on {100} surface of the outside of V-channel, a laser array structure is improved. Thus, the present invention is useful in obtaining stable optical output efficiency and mode control, yield improvement, reproducibility, and high output laser beam.