The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 1992
Filed:
Oct. 29, 1991
John F Mara, Jr, Nashua, NH (US);
Mark E Russell, Londonderry, NH (US);
Russell W Hansen, Stoughton, MA (US);
Raytheon Company, Lexington, MA (US);
Abstract
A radio frequency (RF) amplifier circuit includes an input matching network having a first port coupled to an input port of the circuit. The RF amplifier circuit further includes a high electron mobility field effect transistor (HEMT) having source, gate and drain electrodes with the gate electrode coupled to the second port of the input impedance matching network and means, coupled between the source electrode and a DC reference potential, for providing inductive feedback to the source electrode of the HEMT. The RF amplifier circuit further includes an output matching network having a first port coupled to the drain electrode of the HEMT. The output matching network comprises a first RF propagation network having a first end coupled to the first port of the output matching network and a second end coupled to a first electrode of a capacitor. A second electrode of the capacitor is coupled to a second port of the output matching network. The RF amplifier circuit further includes a monolithic microwave integrated circuit amplifier having an input port coupled to the second port of the output matching network and having an output port coupled to an output port of the RF amplifier circuit.