The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 1992
Filed:
Jun. 10, 1988
Applicant:
Inventors:
Kazutaka Terashima, Kanagawa, JP;
Katsuyoshi Fukuda, Kanagawa, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
C01F / ; C30B / ;
U.S. Cl.
CPC ...
505-1 ; 156610 ; 156621 ; 1566 / ; 505729 ;
Abstract
This invention provides a method of manufacturing of a superconducting oxide wafer in which a plural system oxide superconducting single crystal thin film is grown by the liquid epitaxy process using the flux on a crystal substrate.
Terashima, Kazutaka. (1992). Liquid phase epitaxial growth of high temperature superconducting oxide (U.S. Patent No. 5162297). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5162297
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile