The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 1992
Filed:
Feb. 04, 1991
David G Kolar, Austin, TX (US);
Robert E Jones, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A process for forming a buried contact (50) in a semiconductor device (20) which avoids etch damage to the substrate and forms a self-aligned, low resistance contact to a silicon substrate (22) is provided. After forming a contact opening (32) through overlying insulating and conducting layers (24, 28,30), a silicide region (40) is formed in the substrate at the contact surface (34) exposed by the contact opening (32). A refractory metal silicide which provides high etching selectivity to polysilicon is formed in the substrate at the contact surface (34) by either a blanket deposition of a refractory metal into the contact opening (32), or alternatively, by a selective deposition process using contact surface (34) as a nucleation site. In a preferred embodiment, a cobalt or tantalum silicide region (40) is formed in the substrate at the contact surface (34) and a conductive layer (42) is deposited and etched to form an interconnect (48) contacting the silicide region (40). The high etching selectivity obtainable between the conductive layer ( 42) and the silicide region (40) avoids damage to the substrate surface providing improved device performance.