The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 1992
Filed:
Feb. 20, 1990
Applicant:
Inventors:
Michael Shur, Charlottesville, VA (US);
Kwyro Lee, Seoul, KR;
Assignee:
University of Virginia Alumni Patents Foundation, Charlottesville, VA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 24 ; 257194 ;
Abstract
Multi-layer heterostructure transistors, and methods for making them, involve the use of a p+ doped GaAs gate for an n-channel device to increase barrier height and reduce turn-on threshold. A p++-i-p substrate helps to reduce source and drain capacitances and control short-channel effects. Use of one relatively high temperature photoresist in the fabrication process facilitates alignment of ohmic contact depositions with the source and drain regions.