The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 1992
Filed:
Jun. 18, 1991
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor laser producing visible light includes a first conductivity type GaAs substrate, a first conductivity type (Al.sub.w Ga.sub.1-w).sub.0.5 In.sub.0.5 P cladding layer disposed on the substrate, a (Al.sub.z Ga.sub.1-z).sub.0.5 In.sub.0.5 P active layer disposed on the first conductivity type cladding layer wherein 0.ltoreq.z<w, a second conductivity type (Al.sub.w Ga.sub.1-w).sub.0.5 In.sub.0.5 P cladding layer having a lattice constant and disposed on the active layer, a first conductivity type In.sub.1-x Ga.sub.x As.sub.1-y P.sub.y current blocking layer disposed on part of the second conductivity type cladding layer wherein y is approximately equal to -2x+2, 0.5.ltoreq.x<1, and 0<y.ltoreq.1 so that the lattice constant of the current blocking layer is substantially the same as the lattice constant of the second conductivity type cladding layer, a current concentration and collection structure in contact with the second conductivity type cladding layer for concentrating current flow in a central part of the active layer, and first and second electrodes disposed in contact with the substrate and current concentration and collection structure, respectively.