Random access memory including word line clamping circuits

Abstract

A dynamic random access memory comprising a matrix of memory cells accessed via word lines and bit lines also has clamp signal lines. The word lines terminate at switching elements, controlled by the clamp signal lines, through which the word lines are normally clamped to ground. In a memory access or refresh cycle, the selected word line is temporarily disconnected from ground by activating the corresponding clamp signal line. At the end of the cycle, the selected word line is again clamped to ground prior to precharging of the bit lines, in preparation for the next cycle. Non-selected word lines remain clamped to ground at all times, which prevents noise and improves data retention. Unnecessary current dissipation is avoided because switching elements are switched and word lines are unclamped only when necessary.