The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 1992
Filed:
Jun. 02, 1988
Murray S Welkowsky, Chatsworth, CA (US);
P K Vasudev, Thousand Oaks, CA (US);
Philip G Reif, Chatsworth, CA (US);
Norman W Goodwin, Encino, CA (US);
Hughes Aircraft Company, Los Angeles, CA (US);
Abstract
A method for producing optically flat thin semiconductor wafers (12) bonded to a substrate (16). The wafer (12) is bonded without touching the top surface of the wafer (12). Also, the bond is created without the use of pressure. Electrostatic bonding, or contact bonding or both may be employed. After the wafer (12) is bonded, it is then polished to a desired thickness and flatness. After contact bonding and polishing the wafer (12) may then be removed for further processing. The wafer may then be contact bonded to a final substrate (b 34) or electrostatically bonded to a final substrate (42). The contact bonding technique may also be employed as a means for holding the wafer (12) during precise photolithography. The optical flatness achieved permits improved yields over conventional means for securing wafers during photolithography. The electrostatic bonding technique permits extremely thin optically flat silicon wafers to be produced.