The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 1992

Filed:

May. 04, 1992
Applicant:
Inventors:

Soichiro Ohkubo, Hyogo, JP;

Masaharu Yasuhara, Hyogo, JP;

Akira Ohtsuka, Hyogo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 74 ; 357 73 ;
Abstract

A semiconductor device package is disclosed, which comprises: a substrate of AlN with said semiconductor device affixed to it; a barrier layer of high melting point glass affixed to said substrate around said semiconductor device; a first layer of low melting point glass affixed to said barrier layer; a lead frame affixed to said first layer of low melting point glass and connected electrically to said semiconductor device; a second layer of said low melting point glass affixed to said lead frame on the opposite side from said first layer of low melting point glass; and a cap affixed to said second layer of low melting point glass. When the cap is of AlN, a second barrier layer of the high melting point glass is provided between the second layer of low melting point glass and the cap.


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