The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 1992
Filed:
Apr. 26, 1991
Applicant:
Inventor:
Osamu Kudoh, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 237 ; 357 42 ; 357 15 ;
Abstract
Disclosed herein is a semiconductor device including a thin-film-transistor which comprises a silicon film formed on an insulating layer and including a substrate area, a gate provided to form a channel in the substrate area, a source consisting of a first metal silicide film forming a Schottky barrier with the substrate area, and a drain including a second metal silicide film. The second metal silicide film forms a Schottky barrier with the substrate area or is in ohmic contact with an impurity region selectively formed in the silicon film with a PN junction with the substrate area.