The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 1992
Filed:
Oct. 31, 1990
Atsushi Hori, Moriguchi, JP;
Shuichi Kameyama, Itami, JP;
Hiroshi Shimomura, Moriguchi, JP;
Mizuki Segawa, Hirakata, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A method for producing field-effect type semiconductor devices is disclosed which includes the steps of: forming a gate insulator film on a semiconductor substrate; forming a conductor film on the gate insulator film; and implanting impurity ions in the semiconductor substrate through the gate insulator film and the conductor film for the purpose of controlling a threshold voltage of the device, wherein the conductor film is employed as a gate electrode of the device. The method of this invention has the excellent advantages of readily controlling a threshold voltage of field-effect type semiconductor devices and of preventing the scatter of the threshold voltage values. An alternative embodiment employs formation of a second conductor film and implantation from an inclined direction.