The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1992
Filed:
May. 29, 1991
Naohiro Shimada, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A semiconductor laser device for oscillating laser beams having different wavelengths from adjacent regions includes an n-type first cladding layer, a first active layer, a p-type second cladding layer, a p-type first contact layer, a p-type third cladding layer, a second active layer, an n-type fourth cladding layer, and an n-type second contact layer in this order from an n-type substrate. The first and second electrodes are arranged on the first and second contact layers, respectively, and the third electrode is arranged on the lower surface of the substrate. A difference in energy gaps of the second cladding layer and the first contact layer is so large that no current flows across the second cladding layer and the first contact layer, and a difference in energy gaps of the third cladding layer and the first contact layer is so large that no current flows across the third cladding layer and the first contact layer. P-type intermediate energy-gap layers are formed into stripes between the second cladding layer and the first contact layer and between the third cladding layer and the first contact layer, respectively, and current paths are respectively formed through the intermediate energy-gap layers. The two current paths are substantially aligned to each other in a vertical direction.