The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1992
Filed:
Oct. 01, 1991
Katsuhiko Goto, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
An integrated semiconductor laser including at least two active regions, each active region oscillating at a respective, different wavelength, the integrated semiconductor laser including a common semiconductor substrate of a first conductivity type; a semiconductor first cladding layer of the first conductivity type disposed on the substrate; at least two spaced apart active regions disposed on the first cladding layer within a common active layer, the active layer including at least one compound semiconductor quantum well layer sandwiched between compound semiconductor quantum barrier layers, the quantum barrier layers having a larger energy band gap than and including at least one more element than the quantum well layer, the at least one more element of the quantum barrier layers penetrating farther into the quantum well layer at the first active region than into the quantum well layer at the second active region; a second cladding layer disposed on each of the first and second active regions; and respective electrical contacts to the first and second active regions through the first and second cladding layers disposed on opposite sides of each of the first and second active regions.