The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 1992
Filed:
Jan. 16, 1991
Masahiko Kondow, Kokubunji, JP;
Toshihiro Kawano, Ome, JP;
Shigekazu Minagawa, Tokyo, JP;
Shin Satoh, Iruma, JP;
Kenji Uchida, Hachioji, JP;
Toshiaki Tanaka, Kokubunji, JP;
Takashi Kajimura, Tokyo, JP;
Hitachi-Ltd., Tokyo, JP;
Abstract
An optielectronic device comprising a substrate crystal whose crystal plane is a (n11) plane tilted from the (100) plane toward the [110] direction, or [110] direction where (n>1). When the substrate is applied to an AlGaInP semiconductor laser, the optical device can be cleaved into a rectangular shape, as in the case of a (100) substrate crystal, resulting in easy handling of the chips and also is effective for making the lasting wavelength shorter, lowering the threshold current density for lasing, improving the continuous lasing temperature, etc. Furthermore, semiconductor lasers of different lasing wavelengths can be prepared under good control. Furthermore, a doping efficiency having no dependence on a tilt angle can be obtained by proper selection of a dopant. For example, Si is suitable as an n-type dopant entering sites of group III atom on an (n11) A plane (n.gtoreq.2).