The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 1992
Filed:
Apr. 24, 1990
Robert P Wenz, Cottage Grove, MN (US);
Nang T Tran, Cottage Grove, MN (US);
Minnesota Mining and Manufacturing Company, St. Paul, MN (US);
Abstract
A thin film p-i-n solar cell and Schottky barrier diode are fabricated adjacent one another on a common flexible polyimide substrate. A titanium nitride diffusion barrier prevents contaminants of an aluminum contact layer on the substrate from reacting with the semiconductor body of the solar cell and diode during subsequent fabrication. An n.sup.+ -type hydrogenated amorphous silicon layer overlies the layer of titanium nitride, and forms an ohmic contact with the solar cell and diode. The diode includes an n-type layer of silicon doped with phosphorus to a concentration of 10.sup.18 to 10.sup.20 atoms per cubic centimeter to increase its forward current density. The solar cell and diode are separated from one another by an epoxy strip. A top conducting oxide layer forms a Schottky barrier with the semiconductor body of the diode.