The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 1992
Filed:
Jul. 25, 1991
Trevor P Humphreys, Raleigh, NC (US);
Robert J Nemanich, Cary, NC (US);
Kalyankumar Das, Raleigh, NC (US);
Dale G Thompson, Jr, Chapel Hill, NC (US);
Scott R Sahaida, Raleigh, NC (US);
North Carolina State University, Raleigh, NC (US);
Kobe Steel U.S.A. Inc., New York, NY (US);
Abstract
A semiconductor device comprising a semiconducting diamond layer, (e.g. single crystal or polycrystalline), a refractory metal silicide layer adjacent the diamond layer for forming a rectifying contact therewith, and an annealed interface region between the diamond layer and the refractory metal silicide layer. The annealed interface region is preferably a non-abrupt interface comprising material selected from the group consisting of silicon carbide, the carbide of the refractory metal and mixtures thereof. The present invention also provides a method for making a rectifying contact on a semiconducting diamond layer comprising the steps of forming a refractory metal silicide on the diamond layer, and annealing the refractory metal silicide and diamond layer. Preferably, the step of annealing comprises the step of heating the diamond layer and refractory metal silicide at temperature of at least about 450.degree. C.