The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 1992
Filed:
May. 24, 1991
Applicant:
Inventors:
Yoshiaki Toyoshima, Matsudo, JP;
Tamao Eguchi, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 45 ; 437 27 ; 437162 ; 437150 ;
Abstract
Formed on the element region of an n-type semiconductor substrate is a silicon oxide layer, on which a polysilicon layer is formed. Boron ions, p-type impurities, are then implanted into the polysilicon layer, from which boron diffuses into the element region via the silicon oxide layer, with the result that a p-channel region of the p-channel MOS transistor is formed.