The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1992
Filed:
Sep. 21, 1990
Applicant:
Inventors:
Assignee:
Alcatel Espace, , FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03H / ;
U.S. Cl.
CPC ...
333 / ; 307568 ;
Abstract
A dual-gate field effect transistor attenuator wherein a variable active load (1) is applied to the second gate of the dual-gate field effect transistor (T1). The attenuator is particularly suitable for space telecommunications.
Roques, Daniel. (1992). Dual-gate fet attenuator controlled by a variable load circuit (U.S. Patent No. 5151669). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5151669
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