The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1992
Filed:
Oct. 03, 1988
Hideaki Yamamoto, Tokorozawa, JP;
Koichi Seki, Hachioji, JP;
Toshihiro Tanaka, Hachioji, JP;
Akira Sasano, Tokyo, JP;
Toshihisa Tsukada, Tokyo, JP;
Yasuharu Shimomoto, Tokyo, JP;
Toshio Nakano, Tokyo, JP;
Hideto Kanamori, Okazaki, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor device such as a solar cell, photodiode and solid state imaging device comprises a semiconductor layer made of amorphous silicon formed on a given substrate, and a transparent conductive layer formed by an interfacial reaction between the amorphous silicon and a metallic film directly formed on the amorphous silicon. This transparent conductive layer is used as a transparent electrode of the device and if necessary the remainder after having partially removed the metallic film for the transparent conductive layer is used as a conductive layer and light shielding film.