The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 1992
Filed:
Oct. 03, 1990
Applicant:
Inventors:
Nobuhiro Fukuda, Yokohama, JP;
Sadao Kobayashi, Yokohama, JP;
Kenji Miyachi, Yokohama, JP;
Hidemi Takenouchi, Yokohama, JP;
Yoji Kawahara, Hiroshima, JP;
Takayuki Teramoto, Yokohama, JP;
Assignee:
Mitsui Toatsu Chemicals, Inc., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01J / ; B01J / ;
U.S. Cl.
CPC ...
42218605 ; 427 39 ; 427 74 ; 427162 ; 437101 ; 357 30 ; 136258 ; 148D / ;
Abstract
A method for forming a dihydride rich amorphous silicon semiconductor film suitable for use as a window material of solar cells only from a silicon material, which comprises decomposing a gaseous mixture composed of disilane, a dopant capable of imparting p-type electrical conductivity and a diluent gas by applying a glow discharge energy, and thereby forming a semiconductor film having an optical band gap of at least 1.8 eV, preferably more than 1.9 eV, on a substrate.