The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1992
Filed:
Aug. 21, 1991
Brian M Pierce, Moreno Valley, CA (US);
George D Lawrence, Los Angeles, CA (US);
David B Chang, Tustin, CA (US);
Jonathan W Arenberg, Santa Monica, CA (US);
Hughes Aircraft Company, Los Angeles, CA (US);
Abstract
A semiconductor-to-metal optical switch or device for power limitation in the infrared spectral region includes two thin semiconductor layers sandwiched between two transparent electrodes. An electrical voltage is applied across the two semiconductor layers to produce an active device for blocking incident light in the 8 to 12 .mu.m spectral region. The material composition and thickness of the two semiconductor layers are such that enough photo-excited electrons are generated in the first semiconductor layer so that the second semiconductor layer undergoes a rapid semiconductor-to-metal transition at a predetermined light intensity. The semiconductor layers remain transparent below the predetermined light intensity and the second layer will become metal-like at a light intensity above a threshold level. Upon becoming metal-like, the second semiconductor layer will block the incident light. The first semiconductor layer can be made from a material such as mercury cadium telluride and the second semiconductor layer can be made from a material such as germanium.