The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 1992
Filed:
Jun. 07, 1991
Kunihiko Isshiki, Itami, JP;
Abstract
A method of producing a semiconductor light emitting device includes forming a stripe-shaped mesa on a surface of a semiconductor substrate; epitaxially growing a multiple layer structure including at least a first cladding layer, an active layer, a second cladding layer, and a cap layer so that the active layer and cap layer have mesas corresponding to the mesa of the substrate; depositiong photoresist on the cap layer to form a flattened surface; removing the photoresist to expose the mesa of the cap layer; removing a portion of the cap layer using the photoresist remaining on the cap layer as a mask to make the surface of the cap layer approximately flat; depositing a thin film to be used as a mask for proton or ion bombardment on the cap layer and on the remaining photoresist; removing the remaining photoresist and the thin film on the remaining photoresist; and bombarding the cap layer with protons and ions using the remaining thin film on the cap layer as a mask to produce higher resistivity regions adjacent the remaining thin film than directly below the remaining thin film. Therefore, highly reliable semiconductor laser devices having good and uniform characteristics can be realized.