The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 1992
Filed:
Dec. 12, 1990
Naomasa Sugita, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A Schottky diode device can be fabricated by forming a positive resist layer on an insulating layer formed on N type substrate, and patterning the resist layer. The pattern in the resist includes (i) a first isolation region-defining annular open pattern defining therewithin a device-forming region having a predetermined size, (ii) a second isolation region-defining open pattern dividing the device-forming region into a plurality of unit regions each having a maximum size defined to be 500 .mu.m or less, and (iii) a plurality of individual openings having a size of 1 .mu.m or less and arranged at a predetermined pitch in each of the unit regions. The patterned resist is used to pattern the insulating layer, and P type impurity regions including individual regions are formed using the patterned insulating layer as a mask. After removing the insulating layer, a barrier metal is formed forms Schottky barrier diodes with the individual P type impurity regions and connect them in parallel.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile