The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 1992
Filed:
May. 22, 1991
Sony Corporation, Tokyo, JP;
Abstract
In a method for forming a pattern, by selectively irradiating a charged particle beam onto a substrate in an atmosphere containing a raw material gas, a resist pattern comprising a material which is produced on the substrate from the raw material gas is formed, wherein a pressure of the raw material gas is set to 10.sup.-7 to 10.sup.-5 Torr, an accelerating voltage of the charged particle beam is set to 0.5 to 6 kV, and a beam current of the charged particle beam is set to 10.sup.-13 to 10.sup.-7 A. Thus, a resist pattern of an ultrafine width can be stably formed in a relatively short time. Further, in a method for forming a pattern, by irradiating a charged particle beam onto a substrate in an atmosphere containing a gaseous negative type resist, a cross-linking reaction of the negative type resist molecules adsorbed on the surface of the substrate is caused, and a pattern comprising the negative type resist molecules which caused the cross-linking reaction is formed, so that a pattern which has an ultrafine width and can be easily removed by the wet process can be formed.