The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 1992
Filed:
Aug. 09, 1990
Gerald D Robinson, Westlake Village, CA (US);
Rockwell International Corporation, Seal Beach, CA (US);
Abstract
A mask and lithographic process is disclosed for the formation of conductive patterns on substrates, particularly in connection with the formation of high electron mobility transistors (HEMT) and metal-semiconductor field effect transistors (MESFET). The technique allows the formation of sub-half micron conductive patterns on semiconductor substrates using optical lithography and a multilayer portable conformable mask. The method includes the application of optical contact lithography to a conventional photoresist followed by a deep UV flood exposure of an underlying multilayer PMGI portion. Metal is deposited on a semiconductor substrate through the mask formed by the photoresist and PMGI layers to produce sub-half micron conductive patterns.