The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 1992
Filed:
Jan. 08, 1991
Koichi Tanaka, Nara, JP;
Akiyoshi Mikami, Yamatotakada, JP;
Kouji Taniguchi, Nara, JP;
Katsushi Okibayashi, Sakurai, JP;
Kousuke Terada, Tenri, JP;
Takuo Yamashita, Tenri, JP;
Takashi Ogura, Nara, JP;
Hiroaki Nakaya, Tenri, JP;
Masaru Yoshida, Nara, JP;
Shigeo Nakajima, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Disclosed is an improvement of the chemical vapor deposition (CVD) process for preparing an electroluminescent device having a large area and a large size. The process includes forming a luminescent layer on a substrate by a reduced-pressure chemical vapor deposition method wherein a source material gas is introduced into a reaction chamber. The reaction chamber includes a screening means which screens the source material gas flow in the chamber to form a first area in which the gas is flowing and a second area in which the gas substantially does not flow. The screening means has apertures for connecting the first area and second area. the substrate is placed in the second area, to which the source material is supplied by means of gas diffusion.