The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 1992
Filed:
Dec. 05, 1990
Applicant:
Inventors:
Koichi Imanaka, Kyoto, JP;
Fumihiko Sato, Nagaokakyo, JP;
Assignee:
Omron Tateisi Electronic Co., Kyoto, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357-4 ; 357 16 ; 357 17 ; 372 44 ; 372 45 ;
Abstract
A buffer layer employed for an epitaxial growth includes two kinds of lattices of a superlattice of a lattice matching and a superlattice of a lattice mismatching or of a heterointerface so as to obtain the gas trap effect and the distortion removal effect, thereby improving the quality of the semiconductor device.
Quick Actions:
Imanaka, Koichi. (1992). Semiconductor light emitting device having a superlattice buffer layer (U.S. Patent No. 5146295). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5146295
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile