The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 1992
Filed:
Feb. 05, 1991
Janeen D Anderson, Fremont, CA (US);
Carver A Mead, Pasadena, CA (US);
Timothy P Allen, Los Gatos, CA (US);
Michael F Wall, Sunnyvale, CA (US);
Synaptics, Incorporated, San Jose, CA (US);
Abstract
An adaptable MOS winner take all circuit includes a plurality of adaptable current mirrors. Each adaptable current mirror includes a floating node onto which and from which electrons may be transported by control signals and electrical semiconductor structures. Electrons may be placed onto and removed from a floating node associated with at least one MOS insulated gate field effect transistor, usually the gate of the transistor, in an analog manner, by application of first and second electrical control signals. A first electrical control signal controls the injection of electrons onto the floating node from an electron injection structure and the second electrical control signal controls the removal of electrons from the floating node by an electron removal structure.