The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 1992
Filed:
Mar. 18, 1991
Applicant:
Inventors:
Michael C Smayling, Missouri City, TX (US);
Michael P Duane, Houston, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 44 ; 437154 ; 437933 ; 437152 ;
Abstract
A transistor for VLSI devices employs a phosphorus implant and lateral diffusion performed after the sidewall oxide etch to thereby reduce the impurity concentration and provide a graded junction for the reach-through implanted region between heavily-doped N+ source/drain regions and the channel, beneath the oxide sidewall spacer.
Smayling, Michael. (1992). Method of fabricating an insulated gate field effect transistor having (U.S. Patent No. 5145798). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5145798
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