The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 1992
Filed:
Apr. 12, 1991
Takahiko Oohara, Higashimurayama, JP;
Yoshiro Ohmachi, Higashiyamato, JP;
Yoshiaki Kadota, Ebina, JP;
Kotaro Mitsui, Itami, JP;
Nobuyoshi Ogasawara, Itami, JP;
Takashi Nishimura, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Abstract
A method for manufacturing a solar cell which includes at least a first GaAs layer of a first conductivity type and a second GaAs layer of a second conducitivity type sequentially formed on a first main surface of an Si substrate of the first conductivity type, a first electrode formed on a second main surface opposite to the first main surface of the Si substrate and a second electrode formed on the second GaAs layer. The method includes a first step of forming a layer comprising a material having a thermal expansion coefficient smaller than that of Si on the second main surface of the Si substrate at a temperature close to room temperature and a second step of sequentially forming the first and second GaAs layers on the first main surface of the Si substrate.