The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 1992
Filed:
May. 14, 1991
Applicant:
Inventor:
David A Johnson, Camarillo, CA (US);
Assignee:
Vitesse Semiconductor Corporation, Camarillo, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 63 ; 357 67 ;
Abstract
A dependable ohmic contact with consistently low specific contact resistance (<1.times.10.sup.-6 .OMEGA.-cm.sup.2) to n-type GaAs (10) is produced by a three or four step procedure. The procedure, which is employed following implantation to form doped regions in the GaAs substrate for contacting thereto, comprises:
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Johnson, David. (1992). Ohmic contact for iii-v semiconductor devices (U.S. Patent No. 5144410). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5144410
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile