The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 1992
Filed:
Aug. 31, 1990
Hitachi, Ltd., Tokyo, JP;
Abstract
The structure of a MOSFET and a method for fabricating the same is disclosed, with which it is possible to increase the driving capacity. Heretofore there was a problem that no measures were taken against the decrease in the channel width due to bird's beaks produced at the formation of a field oxide film and that the channel width at the completion of the manufacturing process was smaller than that foreseen during the design of the device. To overcome this problem, a MOSFET is provided in which the junction of the source or the drain is extended up to the end portions in the channel direction so that the effective channel width is determined by the width of the junction on the sides, where the junction is not extended up to the end portions in the channel direction.