The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 1992
Filed:
Mar. 12, 1991
Peter B Gillingham, Kanata, CA;
Mosaid, Inc., Ontario, CA;
Abstract
A bandgap voltage generator useful in CMOS integrated circuits using intrinsic bipolar transistors. The generator is comprised of a pair of bipolar voltage generator which utilizes bipolar devices in a common collector configuration. Therefore for the first time a bandgap voltage reference using the intrinsic vertical bipolar transistor can be implemented in a CMOS chip without the need for an operational amplifier. In order to provide the above, an embodiment of the present invention is a bandgap voltage generator comprising a pair of bipolar transistors connected in common collector configuration with ratioed resistors on the emitters to define branch current and provide temperature compensation, and field effect transistors connected as source followers in series with the emitters of the bipolar transistors for establishing bandgap potential across the resisters and base-emitter junctions, a current comparator connected in series with the drains of the first pair of field effect transistors for controlling the emitter-collector currents in the bipolar transistors, the current comparator and the common collector being connected across a power source.