The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 1992
Filed:
Jan. 17, 1991
Takeshi Matsutani, Machida, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A dry etching method for refractory metal or its compound uses a mixed gas of an etchant gas for etching said refractory metal and a deposit gas for depositing said refractory metal. Halide of the etched refractory metal is used as the deposit gas. By using such a mixed gas, the refractory metal is etched at a portion where ion assist is strong, while the refractory metal is deposited at a portion where the ion assist is weak. In the dry etching, the ion mostly hits the surface of the object facing against the anode and hence the ion assist is strong, while the ion assist is weak at the side wall. Accordingly, the refractory metal is etched at the bottom surface of an etched groove, but at the side wall of the groove the refractory metal is deposited. This deposited metal protects the side wall from side etching. Therefore a fine pattern having a high aspect ratio etching is achieved.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile