The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 1992
Filed:
Mar. 06, 1989
Timothy E Turner, Roanoke, TX (US);
SGS-Thomson Microelectronics, Inc., Carrollton, TX (US);
Abstract
A method for forming a memory cell for a dynamic random access memory includes the steps of first forming the transistors having gate electrodes (34) and source/drain regions (44) on either side thereof. An isolation trench (48) is formed in one of the source/drain regions with a portion (52) remaining. A masking layer (56) is formed over the surface of the substrate and an opening (62) formed therein to expose the source/drain region (52) and associated tungsten layer (50). A conductive plug (62) is formed in the opening followed by formation of an oxide layer (66). The plug (62) comprises the lower plate of the capacitor and then a conformal layer of conductive material (68) is formed over the surface thereof to comprise the upper plate of the capacitor. A planarized layer of oxide (69) is formed over the substrate and an opening (70) formed therein to expose the other of the source/drain regions (44). A contact plug (76) is formed in the opening (70) followed by formation of the interconnect layer (78).