The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 1992
Filed:
Nov. 15, 1990
Peter Voss, Munich, DE;
Siemens Aktiengesellschaft, Munich, DE;
Abstract
In symmetrically blocking thyristors and in diodes, a lowering of the storage charge at the anode side is desirable in some applications. This is achieved by shorts lying in the emitter zone of the anode side. These shorts are formed between zones of a first conductivity type embedded in the emitter zone and zones of a second conductivity type. The zones of the second conductivity type are deeper than those of the first conductivity type and partially overlap the zones of the first conductivity type. Given low current density, these shorts are ineffective; however, they are effective at high current densities. Shorts of this type can also be used at the cathode side in specific diodes that are to be utilized as free-wheeling diodes for GTO thyristors, and can also be employed in asymmetrical GTO thyristors at the anode side.