The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 1992
Filed:
Sep. 18, 1991
Takuya Katoh, Minato, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a semiconductor device, an inter-level insulating film is formed at solid crossing points between upper level interconnections and lower-level interconnections, excepting via hole portions. This means that mechanical support between interconnection levels is given by solid crossing points between interconnections. For this, a semiconductor device having high durabilities against thermal and mechanical impacts can be obtained. Further, since inter-level regions other than the solid crossing points are made vacant to form a cavity, coupling capacity can be reduced to 1/3 to 1/2 of an ordinary multilevel interconnections wherein inter-level regions are fully filled with an inter-level insulating film.