The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 1992
Filed:
Nov. 14, 1990
Applicant:
Inventors:
James R Adams, Colorado Springs, CO (US);
James C Weaver, Colorado Springs, CO (US);
Assignee:
United Technologies Corporation, Hartford, CT (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156628 ; 156657 ; 437186 ; 437233 ; 437247 ; 437918 ;
Abstract
Polycrystalline silicon resistors are formed by reducing the initial thickness of a poly layer to a magnitude such that the etch end point of the lightly doped resistors is equal to the etch end point of the heavily doped interconnection.
Quick Actions:
Adams, James. (1992). Thin polysilicon resistors (U.S. Patent No. 5141597). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5141597
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile