The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 1992
Filed:
Jul. 10, 1991
Toshio Watanabe, Kanagawa, JP;
Masahiko Sato, Kanagawa, JP;
Akio Osabe, Kanagawa, JP;
Hiroyuki Sakayori, Tokyo, JP;
Akira Mase, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa, JP;
Abstract
A method for manufacturing a liquid crystal device in which a pair of substrates are placed in a vacuum chamber, with at least one inlet port provided for communicating with an inner space between the pair of substrates. The vacuum chamber is evacuated and a material including liquid crystals is supplied to the inlet port. The pressure of the chamber is then elevated such that the liquid crystal and other materials are introduced into the space between the pair of substrates by the use of differential pressure between the inside and outside of the space between the substrates. The material including the liquid crystals is maintained at a sufficiently high temperature such that the liquid crystals exhibit isotropic phases.