The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 1992
Filed:
Jun. 27, 1991
Richard A Soref, Newton Centre, MA (US);
Henry F Taylor, College Station, TX (US);
Abstract
Electrically controlled Fabry-Perot resonator elements are created in a semiconductor channel waveguide by etching two in-channel mirror facets (slots) and by positioning the resulting resonator core in the midregion of a P-I-N diode or field-effect transistor. A large number of FPs can be built monolithically on one semiconductor chip, with FPs connected by on-chip passive waveguides used for multiple on-chip time delays. The low-loss chips are coupled efficiently in end-fire fashion to a group of optical fibers that comprise the optical signal processing system. III-V quantum-well, superlattice, and n-i-p-i materials are preferred for the semiconductor devices, and a variety of electrooptical effects are available for use, including the quantum-confined Stark effect, phase-space absorption quenching, Wannier-Stark effect, plasma dispersion effect, and band-flattening.